GP3T040A120H

SemiQ
148-GP3T040A120H
GP3T040A120H

Mfr.:

Description:
SiC MOSFETs Gen3 1200V, 40mohm SiC MOSFET, TO-247-4L

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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Product Attribute Attribute Value Select Attribute
SemiQ
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4L
1 Channel
1.2 kV
140 A
52 mOhms
- 4.5 V, + 18 V
4 V
108 nC
- 55 C
+ 175 C
246 W
Enhancement
Brand: SemiQ
Configuration: Single
Fall Time: 10 ns
Forward Transconductance - Min: 12 S
Packaging: Tube
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 8 ns
Series: GP3T
Factory Pack Quantity: 30
Subcategory: Transistors
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Type: SiC MOSFET
Typical Turn-Off Delay Time: 31 ns
Typical Turn-On Delay Time: 17 ns
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Attributes selected: 0

Compliance Codes
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

GEN3 1200V SiC MOSFET Discrete Devices

SEMiQ GEN3 1200V SiC MOSFET Discrete Devices are third-generation SiC MOSFETs and are 20% smaller than SEMiQ’s second-generation SiC MOSFETs. These devices have been developed to increase performance and cut switching losses in high-voltage applications.

In Stock: 80

Stock:
80 Can Dispatch Immediately
Factory Lead Time:
4 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:

Pricing (GBP)

Qty. Unit Price
Ext. Price
£6.30 £6.30
£3.41 £34.10
£3.13 £375.60
£2.90 £1,479.00