+44 (0) 1494-427500

Part of the TTI Family of Specialists Contact Mouser (London) +44 (0) 1494-427500 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

GP3T016A120H

Name: SemiQ GP3T016A120H
Brand: SemiQ
SKU: 148-GP3T016A120H
Price: 9.62 GBP
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

148-GP3T016A120H

Mfr. No:

GP3T016A120H

Mfr.:

SemiQ

Description:

SiC MOSFETs Gen3 1200V, 16mohm SiC MOSFET, TO-247-4L

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

GP3T016A120H Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about SemiQ GP3T016A120H

Availability

Stock:: Non-Stocked

An unexpected error occurred. Please try again later.
Factory Lead Time:: 18 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

£-.--

Ext. Price:

£-.--

Est. Tariff:

Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£9.62	£9.62
	£7.18	£71.80
	£6.21	£745.20
	£5.88	£2,998.80
	£4.99	£5,089.80

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4L
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	350 A
Rds On - Drain-Source Resistance:	23 mOhms
Vgs - Gate-Source Voltage:	- 4.5 V, + 18 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	260 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	484 W
Channel Mode:	Enhancement
Brand:	SemiQ
Configuration:	Single
Fall Time:	20 ns
Forward Transconductance - Min:	29 S
Packaging:	Tube
Product:	MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	25 ns
Series:	GP3T
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	SiC MOSFET
Typical Turn-Off Delay Time:	65 ns
Typical Turn-On Delay Time:	21 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

GP3T016A120H Datasheet (PDF)

USHTS:: 8541100080
ECCN:: EAR99

GEN3 1200V SiC MOSFET Discrete Devices

SEMiQ GEN3 1200V SiC MOSFET Discrete Devices are third-generation SiC MOSFETs and are 20% smaller than SEMiQ’s second-generation SiC MOSFETs. These devices have been developed to increase performance and cut switching losses in high-voltage applications.