HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
Packaging
IXYS MOSFETs 600V 26A
Datasheet
Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 600 V 26 A 270 mOhms - 30 V, 30 V 2.5 V 72 nC - 55 C + 150 C 460 W Enhancement HiPerFET Tube
IXYS MOSFETs 500V 30A
Datasheet
Non-Stocked Lead-Time 44 Weeks
Min.: 300
Mult.: 30

Si SMD/SMT TO-268-3 N-Channel 1 Channel 500 V 30 A 200 mOhms - 30 V, 30 V 3 V 70 nC - 55 C + 150 C 460 W Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 500V/30A
Datasheet
Non-Stocked Lead-Time 44 Weeks
Min.: 1
Mult.: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 500 V 30 A 200 mOhms - 30 V, 30 V 3.5 V 62 nC - 55 C + 150 C 690 W Enhancement HiPerFET Tube
IXYS MOSFETs 600V 30A
Datasheet
Non-Stocked
Min.: 90
Mult.: 30

Si SMD/SMT TO-268-3 N-Channel 1 Channel 600 V 30 A 240 mOhms - 30 V, 30 V - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-268AA
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 850 V 30 A 220 mOhms - 30 V, 30 V 3.5 V 68 nC - 55 C + 150 C 695 W Enhancement HiPerFET Tube
IXYS MOSFETs 600V 36A
Datasheet
Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 600 V 36 A 190 mOhms - 30 V, 30 V 5 V 102 nC - 55 C + 150 C 650 W Enhancement HiPerFET Tube
IXYS MOSFETs 850V Ultra Junction X-Class Pwr MOSFET
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 850 V 40 A 145 mOhms - 30 V, 30 V 3.5 V 98 nC - 55 C + 150 C 860 W Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 500V/44A
Datasheet
Non-Stocked Lead-Time 44 Weeks
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 500 V 44 A 140 mOhms - 30 V, 30 V 93 nC 830 W HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 300V/50A
Datasheet
Non-Stocked Lead-Time 44 Weeks
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 300 V 50 A 80 mOhms - 30 V, 30 V 65 nC 690 W HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-268AA
Datasheet
Non-Stocked
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 600 V 50 A 73 mOhms - 30 V, 30 V 2.5 V 116 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube
IXYS MOSFETs PolarP2 Power MOSFET
Datasheet
Non-Stocked
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 500 V 52 A 120 mOhms - 30 V, 30 V - 55 C + 150 C 960 W HiPerFET Tube
IXYS MOSFETs 650V/60A TO-268HV
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 650 V 60 A 52 mOhms - 30 V, 30 V 3.5 V 108 nC - 55 C + 150 C 780 W Enhancement HiPerFET Tube
IXYS MOSFETs 69 Amps 300V 0.049 Rds
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 300 V 69 A 49 mOhms - 20 V, 20 V - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 200V/70A
Datasheet
Non-Stocked Lead-Time 39 Weeks
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 200 V 70 A 40 mOhms - 30 V, 30 V 3.5 V 67 nC - 55 C + 150 C 690 W Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 300V/70A
Datasheet
Non-Stocked Lead-Time 41 Weeks
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 300 V 70 A 54 mOhms - 30 V, 30 V 98 nC 830 W HiPerFET Tube
IXYS MOSFETs HiPerFET Power MOSFET Non-Stocked
Min.: 1
Mult.: 1
Si SMD/SMT TO-268-3 HiPerFET Tube
IXYS MOSFETs IXFT80N65X2HV TRL
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 400
Mult.: 400
Reel: 400

Si SMD/SMT D3PAK-3 (TO-268-3) 1 Channel 650 V 80 A 38 mOhms - 30 V, 30 V 3.5 V 140 nC 890 W Enhancement HiPerFET Reel
IXYS MOSFETs TRENCH HIPERFET PWR MOSFET 300V 86A
Datasheet
Non-Stocked Lead-Time 25 Weeks
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 300 V 86 A 43 mOhms - 20 V, 20 V 5 V 180 nC - 55 C + 150 C 830 W Enhancement HiPerFET Tube
IXYS MOSFETs Trench HiperFET Power MOSFET Non-Stocked
Min.: 1
Mult.: 1
Si SMD/SMT TO-268-3 HiPerFET Tube
IXYS MOSFETs POLAR HIPERFET WITH REDUCED RDS 300V 88A
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 300 V 88 A 40 mOhms - 20 V, 20 V 5 V 180 nC - 55 C + 150 C 600 W Enhancement HiPerFET Tube

IXYS MOSFETs 120V 300V
Datasheet
Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 120 A 24 mOhms - 20 V, 20 V 5 V 265 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube

IXYS MOSFETs 140A 250V
Datasheet
Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 140 A 17 mOhms - 20 V, 20 V 5 V 255 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube

IXYS MOSFETs Polar HiperFET Power MOSFET
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 200 V 170 A 14 mOhms - 20 V, 20 V 5 V 185 nC - 55 C + 175 C 1.25 kW Enhancement HiPerFET Tube

IXYS MOSFETs 170A 200V
Datasheet
Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 200 V 170 A HiPerFET Tube

IXYS MOSFETs 180 Amps 150V 0.011 Ohm Rds
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 180 A 11 mOhms - 20 V, 20 V - 55 C + 175 C 830 W Enhancement HiPerFET Tube