HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Results: 720
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
Packaging
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-3P (3)
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 200 V 72 A 20 mOhms - 20 V, 20 V 2.5 V 55 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-3P (3)
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 200 V 90 A 12.8 mOhms - 20 V, 20 V 2.5 V 78 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube

IXYS MOSFETs 54 Amps 300V 0.033 Rds
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 60 A 36 mOhms - 20 V, 20 V 5 V 224 nC - 55 C + 150 C 250 W Enhancement HiPerFET Tube

IXYS MOSFETs 16 Amps 1200V 1 Rds
Datasheet
Non-Stocked
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 9 A 1.04 Ohms - 30 V, 30 V - 55 C + 150 C 230 W Enhancement HiPerFET Tube

IXYS MOSFETs Polar HiperFET Power MOSFET Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 HiPerFET Tube

IXYS MOSFETs 180 Amps 70V 0.006 Rds
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 70 V 180 A 6 mOhms - 20 V, 20 V - 55 C + 150 C 400 W Enhancement HiPerFET Tube

IXYS MOSFETs 94 Amps 150V 0.011 Rds
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 100 A 13 mOhms - 20 V, 20 V 5 V 240 nC - 55 C + 175 C 300 W Enhancement HiPerFET Tube

IXYS MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds
Datasheet
Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 10.5 A 660 mOhms - 30 V, 30 V - 55 C + 150 C 200 W HiPerFET Tube

IXYS MOSFETs 133 Amps 100V 0.0075 Rds
Datasheet
Non-Stocked Lead-Time 39 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 133 A 9 mOhms - 20 V, 20 V 5 V 235 nC - 55 C + 175 C 300 W Enhancement HiPerFET Tube

IXYS MOSFETs 26 Amps 1200V 1 Rds
Datasheet
Non-Stocked Lead-Time 49 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 13 A 630 mOhms - 30 V, 30 V - 55 C + 150 C 290 W Enhancement HiPerFET Tube

IXYS MOSFETs 10 Amps 800V 0.5 Rds
Datasheet
Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 10 A 570 mOhms - 30 V, 30 V - 55 C + 150 C 166 W Enhancement HiPerFET Tube

IXYS MOSFETs GigaMOS Power MOSFET
Datasheet
Non-Stocked Lead-Time 25 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 156 A 8 mOhms - 20 V, 20 V 3 V 358 nC - 55 C + 175 C 600 W Enhancement HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/18A
Datasheet
Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 18 A 490 mOhms - 30 V, 30 V 140 nC 500 W HiPerFET Tube

IXYS MOSFETs 14 Amps 800V 0.42 Rds
Datasheet
Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 13 A 420 mOhms - 30 V, 30 V 5 V 105 nC - 55 C + 150 C 208 W Enhancement HiPerFET Tube

IXYS MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds
Datasheet
Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 900 V 13 A 460 mOhms - 30 V, 30 V 58 nC - 55 C + 150 C 230 W HiPerFET Tube

IXYS MOSFETs 26 Amps 1000V 0.39 Rds
Datasheet
Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 15 A 430 mOhms - 30 V, 30 V 6.5 V 197 nC - 55 C + 150 C 290 W Enhancement HiPerFET Tube

IXYS MOSFETs 32 Amps 1200V 0.46 Rds
Datasheet
Non-Stocked
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 15 A 500 mOhms - 30 V, 30 V 6.5 V 225 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube

IXYS MOSFETs 600V 30A
Datasheet
Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 15 A 250 mOhms - 30 V, 30 V - 55 C + 150 C 166 W Enhancement HiPerFET Tube

IXYS MOSFETs 32 Amps 1000V
Datasheet
Non-Stocked Lead-Time 35 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 18 A 340 mOhms - 30 V, 30 V - 55 C + 150 C 320 W Enhancement HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/23A
Datasheet
Non-Stocked Lead-Time 36 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 23 A 350 mOhms - 30 V, 30 V 3.5 V 195 nC - 55 C + 150 C 570 W Enhancement HiPerFET Tube

IXYS MOSFETs 20 Amps 800V 0.29 Rds
Datasheet
Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 20 A 290 mOhms - 30 V, 30 V 5 V 150 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube

IXYS MOSFETs 600V 20A
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 200 mOhms - 30 V, 30 V 3 V 102 nC - 55 C + 150 C 208 W Enhancement HiPerFET Tube

IXYS MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 21 A 230 mOhms - 30 V, 30 V 6.5 V 230 nC - 55 C + 150 C 300 W HiPerFET Tube

IXYS MOSFETs 500V 24A
Datasheet
Non-Stocked Lead-Time 35 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 24 A 150 mOhms - 30 V, 30 V 2.5 V 98 nC - 55 C + 150 C 208 W Enhancement HiPerFET Tube

IXYS MOSFETs 34 Amps 500V 0.12 Rds
Datasheet
Non-Stocked Lead-Time 44 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 34 A 154 mOhms - 20 V, 20 V - 55 C + 150 C 310 W Enhancement HiPerFET Tube