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NSVMSD1819A-RT1G

Name: onsemi NSVMSD1819A-RT1G
Brand: onsemi
SKU: 863-NSVMSD1819A-RT1G
Price: 0.2 GBP
Availability: InStock

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Mouser No:

863-NSVMSD1819A-RT1G

Mfr. No:

NSVMSD1819A-RT1G

Mfr.:

onsemi

Description:

Bipolar Transistors - BJT SS SC70 GP XSTR NPN 50V

Datasheet:

NSVMSD1819A-RT1G Datasheet

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Learn more about onsemi NSVMSD1819A-RT1G

In Stock: 11,376

Stock:: 11,376 Can Dispatch Immediately

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Factory Lead Time:: 31 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Ext. Price:

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£0.203	£0.20
	£0.176	£1.76
	£0.133	£13.30
	£0.082	£41.00
	£0.064	£64.00
Full Reel (Order in multiples of 3000)
	£0.038	£114.00
	£0.033	£198.00
	£0.028	£252.00
	£0.024	£576.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Bipolar Transistors - BJT
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SC-70-3
Transistor Polarity:	NPN
Configuration:	Single
Maximum DC Collector Current:	200 mA
Collector- Emitter Voltage VCEO Max:	60 V
Collector- Base Voltage VCBO:	60 V
Emitter- Base Voltage VEBO:	7 V
Collector-Emitter Saturation Voltage:	500 mV
Pd - Power Dissipation:	150 mW
Maximum Operating Temperature:	+ 150 C
Series:	MSD1819A-R
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Continuous Collector Current:	100 mA
DC Current Gain hFE Max:	340
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	3000
Subcategory:	Transistors

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Datasheet

NSVMSD1819A-RT1G Datasheet

Material Composition Disclosure

USHTS:: 8541210095
TARIC:: 8541210000
ECCN:: EAR99

MSD1819A-R General Purpose & Low VCE Transistor

onsemi MSD1819A-R General Purpose and Low V_CE Transistor is designed for amplifier applications. This NPN transistor features a high current gain (h_FE) from 210 to 460 and a low V_CE <0.5V. The NPN transistor comes in the SC-70/SOT-323 package, designed for low-power surface mount applications. The silicon epitaxial planar transistor is AEC-Q101 qualified and PPAP capable. This low V_CE transistor is Pb and halogen/BFR-free. Typical applications include reverse battery protection, DC-DC converter output driver, and high-speed switching.