S80KS2562 & S80KS2563 256Mb HYPERRAM™ 2.0 Memory

Infineon Technologies S80KS2562 and S80KS2563 HYPERRAM™ 2.0 Memory are high-speed, low-pin-count, low-power self-refresh Dynamic RAM (DRAM) with a HyperBUS (S80KS2562) or Octal xSPI (S80KS2563) interface. Both devices feature a 200MHz maximum clock rate, a data throughput of up to 400MBps, and energy-saving Hybrid Sleep and Deep Power-Down modes. The S80KS2562 and S80KS2563 HYPERRAM are ideal for use in high-performance embedded systems requiring expansion memory for scratchpad or buffering purposes.

Results: 6
Select Image Part # Mfr. Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Type Memory Size Data Bus Width Maximum Clock Frequency Package/Case Organisation Access Time Supply Voltage - Min Supply Voltage - Max Minimum Operating Temperature Maximum Operating Temperature Packaging
Infineon Technologies S80KS2563GABHV020
Infineon Technologies DRAM SPCM 186In Stock
Min.: 1
Mult.: 1

HyperRAM 256 Mbit 8 bit 200 MHz FBGA-24 32 M x 8 35 ns 1.7 V 2 V - 40 C + 105 C Tray
Infineon Technologies S80KS2562GABHI020
Infineon Technologies DRAM SPCM 380In Stock
Min.: 1
Mult.: 1

HyperRAM 256 Mbit 8 bit 200 MHz FBGA-24 32 M x 8 35 ns 1.7 V 2 V - 40 C + 85 C Tray
Infineon Technologies S80KS2562GABHV020
Infineon Technologies DRAM SPCM 303In Stock
Min.: 1
Mult.: 1

HyperRAM 256 Mbit 8 bit 200 MHz FBGA-24 32 M x 8 35 ns 1.7 V 2 V - 40 C + 105 C Tray
Infineon Technologies DRAM SPCM 9In Stock
338Expected 12/03/2026
Min.: 1
Mult.: 1

HyperRAM 256 Mbit 200 MHz FBGA-24 35 ns 1.7 V 2 V - 40 C + 85 C Tray
Infineon Technologies DRAM SPCM
520Expected 23/02/2026
Min.: 1
Mult.: 1

HyperRAM 256 Mbit 16 bit 200 MHz FBGA-49 35 ns 1.7 V 2 V - 40 C + 85 C Tray
Infineon Technologies DRAM SPCM Non-Stocked Lead-Time 15 Weeks
Min.: 676
Mult.: 676

HyperRAM 256 Mbit 200 MHz FBGA-24 35 ns 1.7 V 2 V - 40 C + 105 C Tray