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S29GL128S10TFIV20

Name: Infineon S29GL128S10TFIV20
Brand: Infineon Technologies
SKU: 797-29GL128S10TFIV20
Price: 4.36 GBP
Availability: InStock

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Mouser No:

797-29GL128S10TFIV20

Mfr. No:

S29GL128S10TFIV20

Mfr.:

Infineon Technologies

Description:

NOR Flash 128Mb 3V 100ns Parallel NOR Flash

Datasheet:

S29GL128S10TFIV20 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies S29GL128S10TFIV20

In Stock: 585

Stock:: 585 Can Dispatch Immediately

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Factory Lead Time:: 10 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£4.36	£4.36
	£4.05	£40.50
	£3.94	£98.50
	£3.80	£190.00
	£3.70	£370.00
	£3.62	£905.00
	£3.54	£1,770.00
	£3.47	£3,157.70
	£3.41	£9,309.30

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	NOR Flash
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TSOP-56
Series:	S29GL128S
Memory Size:	128 Mbit
Supply Voltage - Min:	2.7 V
Supply Voltage - Max:	3.6 V
Active Read Current - Max:	60 mA
Interface Type:	Parallel
Organisation:	8 M x 16
Data Bus Width:	16 bit
Timing Type:	Asynchronous
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Packaging:	Tray
Brand:	Infineon Technologies
Moisture Sensitive:	Yes
Product Type:	NOR Flash
Speed:	100 ns
Factory Pack Quantity:	910
Subcategory:	Memory & Data Storage
Tradename:	MirrorBit

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Datasheet

S29GL128S10TFIV20 Datasheet (PDF)

Statement Regarding the RoHS Compliance of Cypress Products

CNHTS:: 8542329000
CAHTS:: 8542320090
USHTS:: 8542320071
JPHTS:: 8542320312
KRHTS:: 8542321040
TARIC:: 8542326100
MXHTS:: 8471600499
ECCN:: 3A991.b.1.a

S29GL128P NOR Flash Memory

Infineon Technologies S29GL128P NOR Flash Memory devices are single 3V read and write MIRRORBIT™ flash products fabricated on 90nm process technology. These devices offer a fast page access time of 25ns with a corresponding random access time as fast as 90ns. Features of the Infineon S29GL128P include a Write Buffer that allows a maximum of 32words/64B to be programmed in one operation. These devices are ideal for embedded applications that require high density, better performance, and low power consumption.