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DMN1057UCA3-7

Name: Diodes Incorporated DMN1057UCA3-7
Brand: Diodes Incorporated
SKU: 621-DMN1057UCA3-7
Price: 0.35 GBP
Availability: InStock

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See Product Specifications

Mouser No:

621-DMN1057UCA3-7

Mfr. No:

DMN1057UCA3-7

Mfr.:

Diodes Incorporated

Description:

MOSFETs MOSFET BVDSS: 8V-24V X4-DSN0607-3 T&R 10K

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

DMN1057UCA3-7 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Diodes Incorporated DMN1057UCA3-7

In Stock: 3,989

Stock:: 3,989 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

£-.--

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 10000)

Cut Tape

MouseReel™ (+£3.50)

Pricing (GBP)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	£0.353	£0.35
	£0.261	£2.61
	£0.148	£14.80
	£0.10	£50.00
	£0.076	£76.00
	£0.067	£167.50
	£0.058	£290.00
Full Reel (Order in multiples of 10000)
	£0.053	£530.00
	£0.048	£960.00

† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	X4-DSN0607-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	12 V
Id - Continuous Drain Current:	4.6 A
Rds On - Drain-Source Resistance:	102 mOhms
Vgs - Gate-Source Voltage:	8 V
Vgs th - Gate-Source Threshold Voltage:	1.3 V
Qg - Gate Charge:	1.47 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.81 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Single
Fall Time:	9.8 ns
Product Type:	MOSFETs
Rise Time:	12.7 ns
Factory Pack Quantity:	10000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	2.6 ns

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Datasheet

DMN1057UCA3-7 Datasheet (PDF)

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CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

DMN1057UCA3 N-Channel Enhancement Mode MOSFET

Diodes Incorporated DMN1057UCA3 N-Channel Enhancement Mode MOSFET is designed to minimize the on-state resistance (R_DS(ON)) and is ideal for high-efficiency power management applications. This MOSFET features low gate charge and low gate-to-drain charge for a fast switching performance. The DMN1057UCA3 MOSFET features a compact and ultra-low-profile design with a height of just 0.26mm, making it ideal for space-constrained applications. This MOSFET offers power dissipation of up to 1.81W and thermal resistance of up to 198.6°C/W. The DMN1057UCA3 N-channel MOSFET is used in battery management, load switches, and battery protection applications.