QPD0007TR13

Qorvo
772-QPD0007TR13
QPD0007TR13

Mfr.:

Description:
GaN FETs 3.4-3.8GHz 15W 50V GaN Single Channel

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Availability

Stock:
Non-Stocked
Factory Lead Time:
16 Weeks Estimated factory production time.
Minimum: 2500   Multiples: 2500
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:
This Product Ships FREE

Pricing (GBP)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 2500)
£10.48 £26,200.00

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: GaN FETs
RoHS:  
Brand: Qorvo
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: MY
Packaging: Reel
Product Type: GaN FETs
Series: QPD0007
Factory Pack Quantity: 2500
Subcategory: Transistors
Technology: GaN
Part # Aliases: QPD0007
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Attributes selected: 0

Product Overview

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USHTS:
8541497080
ECCN:
5A991.b

QPD0007 GaN RF Transistors

Qorvo QPD0007 GaN RF Transistors are single-path discrete GaN on SiC high-electron-mobility transistors (HEMTs) in a DFN package. These Qorvo RF transistors are single-stage, unmatched transistors capable of delivering a P3dB output power of 20W at +48V operation. The QPD0007 transistors operate in the DC to 5GHz frequency range and offer 73% drain efficiency at 3.5GHz. Typical applications include WCDMA/LTE, macrocell base station, microcell base station, general-purpose, small cell, active antenna, and 5G massive MIMO.

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