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FF06MR12A04MA2AKSA1

Name: Infineon FF06MR12A04MA2AKSA1
Brand: Infineon Technologies
SKU: 726-FF06MR12A04MA2AK
Price: 175.62 GBP
Availability: OutOfStock

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Mouser No:

726-FF06MR12A04MA2AK

Mfr. No:

FF06MR12A04MA2AKSA1

Mfr.:

Infineon Technologies

Description:

Discrete Semiconductor Modules HybridPACK DSC S module with SiC MOSFET and NTC

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

FF06MR12A04MA2AKSA1 Datasheet (PDF)

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On Order:: 120
Factory Lead Time:: 44

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£175.62	£175.62
	£149.68	£1,496.80
120	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	Discrete Semiconductor Modules
RoHS:
Product:	Modules
Type:	1 N-Channel
Technology:	SiC
Vf - Forward Voltage:	5.15 V
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Mounting Style:	Press Fit
Package/Case:	HybridPACK
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	53 ns
Id - Continuous Drain Current:	190 A
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	14.5 mOhms
Rise Time:	25 ns
Factory Pack Quantity:	120
Subcategory:	Discrete and Power Modules
Tradename:	CoolSiC
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	228 ns
Typical Turn-On Delay Time:	32 ns
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs th - Gate-Source Threshold Voltage:	4.55 V
Part # Aliases:	FF06MR12A04MA2 SP005558866

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Datasheet

FF06MR12A04MA2AKSA1 Datasheet (PDF)

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CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

HybridPACK™ DSC S Modules with SiC MOSFET & NTC

Infineon Technologies HybridPACK™ DSC S Modules with SiC MOSFET and NTC are high-performance power modules designed for demanding automotive applications, particularly in hybrid and electric vehicles (xEVs). This compact half-bridge module integrates silicon carbide (SiC) MOSFETs and an NTC thermistor, enabling superior efficiency and thermal performance. With a blocking voltage of 1200V and a nominal current rating of 190A, the modules support high-speed switching with low conduction and switching losses, thanks to the inherent advantages of SiC technology.