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RH7E04BBJFRATCB

Name: ROHM Semiconductor RH7E04BBJFRATCB
Brand: ROHM Semiconductor
SKU: 755-RH7E04BBJFRATCB
Price: 1.74 GBP
Availability: InStock

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Mouser No:

755-RH7E04BBJFRATCB

Mfr. No:

RH7E04BBJFRATCB

Mfr.:

ROHM Semiconductor

Description:

MOSFETs DFN8 P-CH 30V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

RH7E04BBJFRATCB Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RH7E04BBJFRATCB

In Stock: 2,400

Stock:: 2,400 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£1.74	£1.74
	£1.11	£11.10
	£0.773	£77.30
	£0.651	£325.50
	£0.58	£580.00
Full Reel (Order in multiples of 3000)
	£0.492	£1,476.00
	£0.487	£2,922.00
	£0.483	£4,347.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-8
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	7.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 5 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	65 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	75 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	105 ns
Product Type:	MOSFETs
Rise Time:	17 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	160 ns
Typical Turn-On Delay Time:	13 ns

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Datasheet

RH7E04BBJFRATCB Datasheet

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

RH7E04BBJFRA -30V P-Channel Power MOSFET

ROHM Semiconductor RH7E04BBJFRA -30V P-Channel Power MOSFET is a -30V drain-source voltage (V_DSS) and ±40A drain current (I_D) rated automotive grade MOSFET that is AEC-Q101 qualified. This MOSFET has a drain-source on-state resistance (R_DS(ON)) of 7.52mΩ (max.) with V_GS = -10V, I_D= -20A or 11.3mΩ (max.) with V_GS = -4.5V, I_D = -10A. The total gate charge (Q_g) is 65.0nC (typ.) with V_DD = -15V, I_D = -10A, V_GS = -10V. The ROHM Semiconductor RH7E04BBJFRA is ideal for Advanced Driver Assistance Systems (ADAS), information, lighting, and body applications.