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NVMYS3D8N04CLTWG

Name: onsemi NVMYS3D8N04CLTWG
Brand: onsemi
SKU: 863-NVMYS3D8N04CLTWG
Price: 1.38 GBP
Availability: InStock

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Mouser No:

863-NVMYS3D8N04CLTWG

Mfr. No:

NVMYS3D8N04CLTWG

Mfr.:

onsemi

Description:

MOSFETs T6 40V LL LFPAK

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

NVMYS3D8N04CLTWG Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVMYS3D8N04CLTWG

In Stock: 3,000

Stock:: 3,000 Can Dispatch Immediately

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Factory Lead Time:: 31 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

£-.--

Ext. Price:

£-.--

Est. Tariff:

Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£1.38	£1.38
	£1.26	£12.60
	£0.834	£83.40
	£0.759	£379.50
Full Reel (Order in multiples of 3000)
	£0.426	£1,278.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	87 A
Rds On - Drain-Source Resistance:	3.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	18 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	55 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	4 ns
Forward Transconductance - Min:	80 S
Product Type:	MOSFETs
Rise Time:	100 ns
Series:	NVMYS3D8N04CL
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	17 ns
Typical Turn-On Delay Time:	9.3 ns

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Datasheet

NVMYS3D8N04CLTWG Datasheet

PCN

Product Change Notification 2024-06-12 (PDF)

Material Composition Disclosure

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

NVMYS3D8N04CL Power MOSFET

onsemi NVMYS3D8N04CL Power MOSFET is a single N-channel MOSFET designed for compact and efficient designs with high thermal performance. This power MOSFET operates at 40V Drain-to-Source voltage, 3.7mΩ drain resistance, and 87A continuous drain current. The NVMYS3D8N04CL N-channel MOSFET is AEC-Q101 qualified, PPAP capable, and suitable for automotive applications that require enhanced board-level reliability. This device is Pb-free and RoHS Compliant. The NVMYS3D8N04CL is ideal for reverse battery protection power switches, switching power supplies, solenoid drivers, motor control, and load switches.