TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.

Results: 177
Select Image Part # Mfr. Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Vishay / Siliconix MOSFETs 60V 90A 300W 4.9mohm @ 10V Non-Stocked
Min.: 500
Mult.: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 90 A 3.9 mOhms - 20 V, 20 V 1 V 300 nC - 55 C + 175 C 300 W Enhancement TrenchFET Tube

Vishay Semiconductors MOSFETs 40V Vds 20V Vgs SOT-23 Non-Stocked Lead-Time 4 Weeks

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 40 V 5.6 A 42 mOhms - 20 V, 20 V 2.5 V 2.9 nC - 55 C + 150 C 2.1 W Enhancement TrenchFET Reel