CoolSiC™ 750V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETs are designed to offer high efficiency, robustness against parasitic turn-on for unipolar gate driving, and reliability. These MOSFETs offer superior performance in Totem Pole, ANPC, Vienna rectifier, and FCC hard-switching topologies. The reduction in Output Capacitance (Coss) enables the MOSFETs to operate at higher switching frequencies in Cycloconverter, CLLC, DAB, and LLC soft switching topologies. The CoolSiC™ 750V G2 MOSFETs feature up to 78mΩ maximum drain-source on-resistance and switching losses through improved gate control. These MOSFETs are automotive and industrial qualified. Typical applications include EV charging infrastructure, telecom, circuit breakers, solid state relays, solar PV inverters, and HV‑LV DC-DC converters.

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Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 750 V G2
Datasheet
9,734On Order
MouseReel Available
Min.: 1
Mult.: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 840 V 222 A 8.5 mOhms - 7 V to + 23 V 5.6 V 171 nC - 55 C + 175 C 789 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
728Expected 31/07/2026
MouseReel Available
Min.: 1
Mult.: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 53 A 41.3 mOhms - 7 V, + 23 V 5.6 V 37 nC - 55 C + 175 C 217 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 750 V G2
Datasheet
50Expected 18/12/2026
Min.: 1
Mult.: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 40 mOhms - 7 V to + 23 V 4.5 V 59 nC - 55 C + 175 C 340 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SiC MOSFET, 750 V
Datasheet
Lead-Time 52 Weeks
Min.: 1
Mult.: 1

Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 85 A 20 mOhms - 7 V, + 23 V 5.6 V 74 nC - 55 C + 175 C 263 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SiC MOSFET, 750 V
Datasheet
Lead-Time 52 Weeks
Min.: 1
Mult.: 1

Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 60 A 49 mOhms - 7 V, + 23 V 5.6 V 49 nC - 55 C + 175 C 202 W Enhancement CoolSiC