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NTBLS0D8N08XTXG

Name: onsemi NTBLS0D8N08XTXG
Brand: onsemi
SKU: 863-NTBLS0D8N08XTXG
Price: 6.28 GBP
Availability: OutOfStock

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Mouser No:

863-NTBLS0D8N08XTXG

Mfr. No:

NTBLS0D8N08XTXG

Mfr.:

onsemi

Description:

MOSFETs T10S 80V SG NCH MOSFET TOLL

Datasheet:

NTBLS0D8N08XTXG Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTBLS0D8N08XTXG

Availability

Stock:: 0

You can still purchase this product for backorder.

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On Order:: 1,673

Expected 15/09/2026

32,000

10,000

Expected 26/11/2026

6,000

Expected 24/12/2026

16,000

Expected 31/12/2026
Factory Lead Time:: 27

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1 Maximum: 4000

Unit Price:

£-.--

Ext. Price:

£-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2000)

Cut Tape

MouseReel™ (+£3.50)

Pricing (GBP)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	£6.28	£6.28
	£4.43	£44.30
	£3.57	£357.00
	£3.18	£1,590.00
	£2.82	£2,820.00
Full Reel (Order in multiples of 2000)
	£2.82	£5,640.00

† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	457 A
Rds On - Drain-Source Resistance:	790 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	174 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	325 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Fall Time:	20 ns
Forward Transconductance - Min:	485 S
Product Type:	MOSFETs
Rise Time:	15 ns
Series:	NTBLS0D8N08X
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	70 ns
Typical Turn-On Delay Time:	34 ns

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Datasheet

NTBLS0D8N08XTXG Datasheet

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Japan
Assembly Country of Origin:: Philippines
Country of Diffusion:: Japan

The country is subject to change at the time of shipment.

Cloud/Data Center Power Management Solutions

Cloud and data center power infrastructure is entering an unprecedented period of growth, driven by hyperscale expansion, AI workloads, and the rapid rise of data‑intensive applications. As cloud service providers and enterprise data centers scale global footprints, efficient, reliable power delivery has become a critical enabler of performance, availability, and total cost of ownership.

Energy Storage Solutions

onsemi Energy Storage Systems (ESS) store electricity from various power sources, like coal, nuclear, wind, and solar, in different forms, including batteries (electrochemical), compressed air (mechanical), and molten salt (thermal). This solution focuses on battery energy storage systems connected to solar inverter systems.

NTBLS0D8N08X 80V Single N-Channel MOSFET

onsemi NTBLS0D8N08X 80V Single N-Channel MOSFET has a low Q_rr and a softer recovery body diode to ensure efficient energy management. The onsemi NTBLS0D8N08X also boasts ultra-low R_DS(on), enhancing overall power efficiency. Its low Q_g further contributes to optimized switching characteristics. Additionally, it adheres to environmental standards, being both Pb-free and Halogen/BFR-free.

PowerTrench Technology

onsemi PowerTrench Technology represents the advancement of PowerTrench technology, especially from T6 to T10, which signifies a breakthrough in power electronics. Developed by onsemi, PowerTrench MOSFETs offer enhanced efficiency and performance across various applications. The shift from T6/T8 to T10 significantly improves on-resistance and switching performance, which is crucial for energy-efficient designs.