NVXK2TR80WDT

onsemi
863-NVXK2TR80WDT
NVXK2TR80WDT

Mfr.:

Description:
MOSFET Modules APM32 SIC H-BRIDGE POWER MODULE

Lifecycle:
New At Mouser
ECAD Model:
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In Stock: 48

Stock:
48 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:
This Product Ships FREE

Pricing (GBP)

Qty. Unit Price
Ext. Price
£38.72 £38.72
£31.84 £318.40
£28.24 £3,388.80

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFET Modules
RoHS:  
SiC
Through Hole
APM-32
N-Channel
4 Channel
1.2 kV
20 A
116 mOhms
- 15 V, + 25 V
4.3 V
- 40 C
+ 175 C
82 W
NVXK2TR80WDT
Tube
Brand: onsemi
Configuration: Dual Half-Bridge
Fall Time: 9 ns
Height: 5.8 mm
Length: 44.2 mm
Product Type: MOSFET Modules
Rise Time: 12 ns
Factory Pack Quantity: 60
Subcategory: Discrete and Power Modules
Tradename: EliteSiC
Type: Half-Bridge
Typical Turn-On Delay Time: 12 ns
Width: 29 mm
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Attributes selected: 0

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

NVXK2TR80WDT Silicon Carbide (SiC) Module

onsemi NVXK2TR80WDT Silicon Carbide (SiC) Module is a 1200V, 80mΩ, and 20A dual half-bridge EliteSiC power module housed in a APM32 Dual Inline Package (DIP). This SiC module is compactly designed to have a low total module resistance. The NVXK2TR80WDT power module is automotive-qualified per AEC-Q101 and AQG324. This power module is lead-free, ROHS, and UL94V-0 compliant. The NVXK2TR80WDT EliteSiC MOSFET module is ideally used in HV DC-DC and onboard chargers in xEV applications.