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SQ4946CEY-T1_GE3

Name: Vishay SQ4946CEY-T1_GE3
Brand: Vishay / Siliconix
SKU: 78-SQ4946CEY-T1_GE3
Price: 1.37 GBP
Availability: InStock

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Mouser No:

78-SQ4946CEY-T1_GE3

Mfr. No:

SQ4946CEY-T1_GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs DUAL N-CHANNEL 60-V (D-S) 175C MOSFE

Datasheet:

SQ4946CEY-T1_GE3 Datasheet

ECAD Model:

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Learn more about Vishay / Siliconix SQ4946CEY-T1_GE3

In Stock: 10,971

Stock:: 10,971

Can Dispatch Immediately

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On Order:: 22,500

Expected 14/09/2026

10,000

Expected 01/10/2026
Factory Lead Time:: 20

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

£-.--

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+£3.50)

Pricing (GBP)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	£1.37	£1.37
	£0.856	£8.56
	£0.557	£55.70
	£0.43	£215.00
	£0.388	£388.00
Full Reel (Order in multiples of 2500)
	£0.353	£882.50
	£0.332	£1,660.00
	£0.32	£3,200.00
	£0.315	£7,875.00

† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOIC-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	7 A
Rds On - Drain-Source Resistance:	82.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	14.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	4 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	DE
Fall Time:	3 ns
Forward Transconductance - Min:	15 S
Product Type:	MOSFETs
Rise Time:	4 ns
Series:	SQ
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	TrenchFET Power MOSFET
Typical Turn-Off Delay Time:	17 ns
Typical Turn-On Delay Time:	8 ns
Unit Weight:	750 mg

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Technical Resources

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

SQ Automotive Power MOSFETs

Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified and produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in various packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK® SO-8, PowerPAK 8x8L, PowerPAK SO-8L, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W, as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-channel co-packages. Vishay / Siliconix SQ Automotive Power MOSFETs are offered in various polarity options, including N-channel and P-channel co-packages.

48V DC/DC Converters

Vishay 48V DC/DC Converters are used in the products that need to remain 12V battery load while 48V battery is used in the vehicles. These converters can bring down 48V-12V, so the converter is a significant application for future cars. Different topologies are made possible with these devices like multiphase coupled and non-coupled inductors. Vishay offers a broad portfolio of solutions with standard devices like MOSFETs, diodes, resistors, capacitors, inductors, and customized magnetic solutions.

SQ4946CEY Auto Dual N-Channel MOSFET

Vishay / Siliconix SQ4946CEY Auto Dual N-Channel MOSFET offers 60V_DS drain-source voltage, ±100nA gate-source leakage, and 865pF maximum input capacitance. This MOSFET features TrenchFET® power and is ideal for automotive applications. Vishay / Siliconix SQ4946CEY Auto Dual N-Channel MOSFET is AEC-Q101 qualified, 100% R_g and UIS tested, RoHS-compliant, and halogen-free.

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET^® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK^® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.