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GS66502B-TR

Name: Infineon GS66502B-TR
Brand: Infineon Technologies
SKU: 499-GS66502B-TR
Price: 9.48 GBP
Availability: OutOfStock

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Mouser No:

499-GS66502B-TR

Mfr. No:

GS66502B-TR

Mfr.:

Infineon Technologies

Description:

GaN FETs 650V, 7.5A, Bottom-Side Cooled E-mode GaN Transistor

Datasheet:

GS66502B-TR Datasheet (PDF)

ECAD Model:

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Availability

Stock:: 0

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On Order:: 1,891
Factory Lead Time:: 53

Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 1891 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+£3.50)

Pricing (GBP)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	£9.48	£9.48
	£7.72	£77.20
	£6.43	£643.00
	£5.74	£2,870.00
	£5.50	£5,500.00
Full Reel (Order in multiples of 3000)
	£4.67	£14,010.00

† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Transistor Polarity:	HEMT
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	7.5 A
Rds On - Drain-Source Resistance:	260 mOhms
Vgs - Gate-Source Voltage:	- 10 V, 7 V
Vgs th - Gate-Source Threshold Voltage:	2.6 V
Qg - Gate Charge:	1.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Channel Mode:	Enhancement
Tradename:	GaNPX
Brand:	Infineon Technologies
Configuration:	Single
Development Kit:	GS665MB-EVB
Maximum Operating Frequency:	10 MHz
Minimum Operating Frequency:	0 Hz
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	GaN FETs
Series:	GS665xx
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	E-Mode

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Datasheet

GS66502B-TR Datasheet (PDF)

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

GS665xx Enhancement-Mode Silicon Power Transistors

Infineon Technologies GS665xx Enhancement-Mode High Electron Mobility Transistors (E-HEMT) feature high current, high voltage breakdown, and high switching frequency. These power transistors include Island Technology cell layout with high-current die and high yield, and GaNPX^® small packaging enables low inductance and low thermal resistance. These power transistors offer very low junction-to-case thermal resistance for high-power applications. The GS665xx enhancement-mode silicon power transistors are available as bottom-sided or top-sided cooled transistors. These power transistors provide ultra-low FOM die, reverse current capability, and zero reverse recovery loss.