CGHV600 6GHz GaN HEMTs

Wolfspeed CGHV600 6GHz gallium nitride (GaN) High Electron Mobility Transistors (HEMTs) provide superior performance compared with silicon (Si) or gallium arsenide (GaAs) transistors. CGHV600 GaN HEMTs offer higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. These transistors also offer greater power density and wider bandwidths. CGHV600 series devices are ideal for use in a variety of applications, including cellular infrastructure and Class A, AB, and linear amplifiers.
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Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
MACOM GaN FETs GaN HEMT Die DC-6.0GHz, 40 Watt
Datasheet
Product Comments
Lead-Time 26 Weeks
Min.: 10
Mult.: 10

SMD/SMT Die N-Channel 2 Channel 50 V 3.2 A
MACOM GaN FETs GaN HEMT Die DC-6.0GHz, 75 Watt
Datasheet
Product Comments
10In Stock
Min.: 10
Mult.: 10

SMD/SMT Die N-Channel 150 V 10 A 280 mOhms - 10 V, 2 V 41.6 W