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Select Image Part # Mfr. Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Product Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Pd - Power Dissipation Minimum Operating Temperature Maximum Operating Temperature Packaging
Infineon Technologies IGBT Modules IHV IHM T Lead-Time 20 Weeks
Min.: 1
Mult.: 1

IGBT Silicon Modules Single 3.3 kV 2.3 V 1.4 kA 400 nA 2.9 MW - 40 C + 150 C Tray
Infineon Technologies FZ2000R33HE4BOSA1
Infineon Technologies IGBT Modules IHV IHM T Lead-Time 20 Weeks
Min.: 1
Mult.: 1

IGBT Silicon Modules Single 3.3 kV 2.2 V 2 kA 400 nA 4.2 MW - 40 C + 150 C Tray