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FAD7171MX

Name: onsemi FAD7171MX
Brand: onsemi
SKU: 863-FAD7171MX
Price: 1.25 GBP
Availability: InStock

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See Product Specifications

Mouser No:

863-FAD7171MX

Mfr. No:

FAD7171MX

Mfr.:

onsemi

Description:

Gate Drivers 600V, 4A, SOIC-8, High-Side Gate Drive IC

Datasheet:

FAD7171MX Datasheet

ECAD Model:

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More Information

Learn more about onsemi FAD7171MX

In Stock: 1,448

Stock:: 1,448 Can Dispatch Immediately

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Factory Lead Time:: 17 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£1.25	£1.25
	£0.917	£9.17
	£0.834	£20.85
	£0.741	£74.10
	£0.697	£174.25
	£0.67	£335.00
	£0.649	£649.00
Full Reel (Order in multiples of 2500)
	£0.601	£1,502.50
	£0.595	£4,462.50

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Gate Drivers
RoHS:
Product:	Driver ICs - Various
Type:	High-Side
Mounting Style:	SMD/SMT
Package/Case:	SOIC-8
Number of Drivers:	2 Driver
Number of Outputs:	1 Output
Supply Voltage - Min:	10 V
Supply Voltage - Max:	20 V
Rise Time:	11 ns
Fall Time:	12 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	FAD7171MX
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Input Voltage - Max:	20 V
Input Voltage - Min:	10 V
Maximum Turn-Off Delay Time:	95 ns
Maximum Turn-On Delay Time:	100 ns
Off Time - Max:	95 ns
Operating Supply Current:	105 uA
Output Voltage:	35 mV
Pd - Power Dissipation:	625 mW
Product Type:	Gate Drivers
Propagation Delay - Max:	100 ns
Shutdown:	No Shutdown
Factory Pack Quantity:	2500
Subcategory:	PMIC - Power Management ICs
Technology:	Si

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Datasheet

FAD7171MX Datasheet

PCN

Material Composition Disclosure

USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

FAD7171MX High-Side Automotive Gate Driver IC

onsemi FAD7171MX High-Side Automotive Gate Driver IC is a 600V, 4A monolithic high-side gate drive IC, which can drive high-speed MOSFETs and IGBTs that operate up to +600V. The onsemi FAD7171MX features a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. onsemi’s high-voltage process and common-mode noise cancelling techniques provide stable operation of the high-side driver under high-dv/dt noise circumstances. An advanced level-shift circuit offers high-side gate driver operation up to V_S=-13V (typical) for V_BS=15V. The Under Voltage Lock Out (UVLO) circuit prevents malfunction when V_BS is lower than the specified threshold voltage.