GP2T030A170H

GP2T030A170 QSiC™ 1700V SiC MOSFET

SemiQ GP2T030A170 QSiC™ 1700V SiC MOSFET is engineered for medium-voltage high-power conversion applications, enabling more compact system designs at a large scale with lower system costs and higher power densities. This high-speed, switching planar D-MOSFET offers a reliable body diode that operates up to +175°C. The module is tested beyond 1900V and UIL avalanche tested to 600mJ. The series delivers low switching and conduction losses and low capacitance. The 1700V device also features a rugged gate oxide for long-term reliability and undergoes wafer-level burn-in (WLBI) to screen out potentially weak oxide devices. SemiQ GP2T030A170 QSiC 1700V SiC MOSFET is a four-pin TO-247-4L-packaged discrete with drain, source, driver source, and gate pins. Applications include solar inverters, electric vehicle (EV) charging stations, and motor drives.