NDSH10120C-F155

onsemi
863-NDSH10120C-F155
NDSH10120C-F155

Mfr.:

Description:
SiC Schottky Diodes SIC DIODE GEN2.0 1200V TO

Datasheet:
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In Stock: 1,266

Stock:
1,266 Can Dispatch Immediately
Factory Lead Time:
13 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:

Pricing (GBP)

Qty. Unit Price
Ext. Price
£4.77 £4.77
£3.32 £33.20
£2.26 £226.00

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC Schottky Diodes
RoHS:  
REACH - SVHC:
Through Hole
TO-247-2
Single
12 A
1.2 kV
1.75 V
546 A
200 uA
- 55 C
+ 175 C
NDSH10120C-F155
Tube
Brand: onsemi
Pd - Power Dissipation: 94 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 450
Subcategory: Diodes & Rectifiers
Tradename: EliteSiC
Vr - Reverse Voltage: 1.2 kV
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Attributes selected: 0

Datasheet

CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99

D3 EliteSiC Diodes

onsemi D3 EliteSiC Diodes are a solution for applications requiring high-power PFC and output rectification. The onsemi D3 has a maximum voltage rating of 1200V. These diodes come in two package options, TO-247-2LD and TO-247-3LD, providing flexibility for various designs. The D3 EliteSiC Diodes are optimized for high-temperature operation with low series-resistance temperature dependency, ensuring consistent and reliable performance even under extreme conditions.

NDSH10120C-F155 Silicon Carbide Schottky Diode

onsemi NDSH10120C-F155 Silicon Carbide (SiC) Schottky Diode provides superior switching performance and higher reliability compared to Silicon. The EliteSiC NDSH10120C-F155 features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. Applications include general purpose, SMPS, solar inverters, UPS, and power switching circuits.

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