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GCMS040B120S1-E1

Name: SemiQ GCMS040B120S1-E1
Brand: SemiQ
SKU: 148-GCMS040B120S1-E1
Price: 21.89 GBP
Availability: InStock

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Mouser No:

148-GCMS040B120S1-E1

Mfr. No:

GCMS040B120S1-E1

Mfr.:

SemiQ

Description:

MOSFET Modules 1200V SiC COPACK Power Module

Datasheet:

GCMS040B120S1-E1 Datasheet (PDF)

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In Stock: 5

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£21.89	£21.89
	£16.63	£166.30
	£14.61	£1,461.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	MOSFET Modules
RoHS:
REACH - SVHC:
Technology:	SiC
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	57 A
Rds On - Drain-Source Resistance:	52 mOhms
Vgs - Gate-Source Voltage:	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	242 W
Packaging:	Tube
Brand:	SemiQ
Fall Time:	16 ns
Product Type:	MOSFET Modules
Rise Time:	5 ns
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Type:	COPACK Power Module
Typical Turn-Off Delay Time:	21 ns
Typical Turn-On Delay Time:	15 ns
Vf - Forward Voltage:	1.52 V

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Datasheet

GCMS040B120S1-E1 Datasheet (PDF)

CNHTS:: 8504409100
CAHTS:: 8541100090
USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

GCMS040B120S1-E1 1200V SiC COPACK Power Module

SemiQ GCMS040B120S1-E1 1200V SiC COPACK Power Module is simple to drive, very rugged, and easy to mount with high-speed switching SiC MOSFETs. The GCMS040B120S1-E1 supplies freewheeling SiC SBD with zero reverse recovery. The device provides low switching losses and junction-to-case thermal resistance. The SemiQ GCMS040B120S1-E1 Power Module offers a low Q_RR at high temperatures and allows direct mounting to the heatsink in an isolated package.

SiC MOSFET Power Modules

SemiQ SiC MOSFET Power Modules provide low on-state resistance at high temperatures with excellent switching performance, simplifying power electronic systems' thermal design. The SiC MOSFET Modules operate with zero switching loss to significantly increase efficiency and reducing heat dissipation, allowing smaller heatsinks.