TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs

Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high-speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. Infineon H5 IGBTs offer leading efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid- to high-range switching frequency converters.

Types of Discrete Semiconductors
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Infineon Technologies IGBTs IGBT PRODUCTS
Datasheet
1,425In Stock
Min.: 1
Mult.: 1
: 1,000

IGBT Transistors Si SMD/SMT D2PAK-3 (TO-263-3)
Infineon Technologies IGBTs INDUSTRY
Datasheet
1,280In Stock
Min.: 1
Mult.: 1
: 1,000

IGBT Transistors Si SMD/SMT D2PAK-3 (TO-263-3)
Infineon Technologies IGBTs 650 V, 50 A IGBT Discrete with Silicon Carbide Schottky diode
Datasheet
615In Stock
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
Infineon Technologies IGBTs 650 V, 50 A IGBT Discrete with Silicon Carbide Schottky diode
Datasheet
279In Stock
Min.: 1
Mult.: 1
IGBT Transistors Si Through Hole TO-247-4
Infineon Technologies IGBTs DISCRETE SWITCHES
Datasheet
382In Stock
Min.: 1
Mult.: 1
: 1,000

IGBT Transistors Si SMD/SMT D2PAK-3 (TO-263-3)
Infineon Technologies IGBTs DISCRETE SWITCHES
Datasheet
396In Stock
Min.: 1
Mult.: 1
: 1,000

IGBT Transistors Si SMD/SMT D2PAK-3 (TO-263-3)
Infineon Technologies IGBT Modules 650 V, 40 A 3-level IGBT module
Datasheet
8In Stock
Min.: 1
Mult.: 1

IGBT Modules Si
Infineon Technologies IGBTs 650 V, 40 A IGBT Discrete with Silicon Carbide Schottky diode
Datasheet
480Expected 20/07/2026
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole
Infineon Technologies IGBTs 650 V, 75 A IGBT Discrete with CoolSiC diode
Datasheet
Non-Stocked Lead-Time 45 Weeks
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
Infineon Technologies IGBTs 650 V, 40 A IGBT Discrete with Silicon Carbide Schottky diode
Datasheet
Non-Stocked Lead-Time 45 Weeks
Min.: 240
Mult.: 240

IGBT Transistors Si Through Hole
Infineon Technologies IGBTs 650 V, 75 A IGBT Discrete with Silicon Carbide Schottky diode
Datasheet
Non-Stocked Lead-Time 45 Weeks
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-4
Infineon Technologies IGBTs DISCRETE SWITCHES
Datasheet
Non-Stocked Lead-Time 39 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

IGBT Transistors Si SMD/SMT D2PAK-3 (TO-263-3)
Infineon Technologies IGBTs DISCRETE SWITCHES
Datasheet
Non-Stocked Lead-Time 39 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

IGBT Transistors Si SMD/SMT D2PAK-3 (TO-263-3)
Infineon Technologies IGBTs DISCRETE SWITCHES
Datasheet
Non-Stocked Lead-Time 39 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

IGBT Transistors Si SMD/SMT D2PAK-3 (TO-263-3)
Infineon Technologies IGBTs DISCRETE SWITCHES
Datasheet
Non-Stocked Lead-Time 39 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

IGBT Transistors Si SMD/SMT D2PAK-3 (TO-263-3)