SIHR080N60E-T1-GE3

Vishay / Siliconix
78-SIHR080N60ET1GE3
SIHR080N60E-T1-GE3

Mfr.:

Description:
MOSFETs N-CHANNEL 600V

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In Stock: 2,212

Stock:
2,212 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:

Pricing (GBP)

Qty. Unit Price
Ext. Price
£5.38 £5.38
£3.86 £38.60
£2.93 £293.00
£2.76 £2,760.00
Full Reel (Order in multiples of 2000)
£2.61 £5,220.00
£2.49 £9,960.00

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PowerPAK-8
N-Channel
1 Channel
600 V
51 A
74 mOhms
- 30 V, 30 V
5 V
42 nC
- 55 C
+ 150 C
500 W
Enhancement
PowerPAK
Reel
Cut Tape
Brand: Vishay / Siliconix
Configuration: Single
Fall Time: 31 ns
Forward Transconductance - Min: 4.6 S
Product Type: MOSFETs
Rise Time: 96 ns
Series: SIHR E
Factory Pack Quantity: 2000
Subcategory: Transistors
Typical Turn-Off Delay Time: 37 ns
Typical Turn-On Delay Time: 31 ns
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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

SiHR080N60E N-Channel Power MOSFET

Vishay / Siliconix  SiHR080N60E N-Channel Power MOSFET is a  fourth-generation 600V E series power MOSFET in a PowerPAK® 8 x 8LR package. The MOSFET provides higher efficiency and power density for telecom, industrial and computing applications. The SiHR080N60E features a low typical on-resistance of 0.074Ω at 10V and ultra-low gate charge down to 42nC. This results in reduced conduction and switching losses, thereby saving energy and increasing efficiency in power systems >2kW. The package also provides a Kelvin connection for improved switching efficiency. The Vishay / Siliconix  SiHR080N60E  is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100% UIS testing.