Results: 33
Select Image Part # Mfr. Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Transistor Polarity Technology Id - Continuous Drain Current Vds - Drain-Source Breakdown Voltage Operating Frequency Gain Output Power Minimum Operating Temperature Maximum Operating Temperature Mounting Style Package/Case Packaging
NXP Semiconductors RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 720-960 MHz, 2 W Avg., 48 V Non-Stocked Lead-Time 53 Weeks
Min.: 1
Mult.: 1
: 1,000

N-Channel Si 64 mA 105 V 728 MHz to 960 MHz 19.1 dB 2 W - 40 C + 150 C SMD/SMT PQFN-24 Reel, Cut Tape, MouseReel
NXP Semiconductors RF MOSFET Transistors Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V Non-Stocked Lead-Time 53 Weeks
Min.: 1
Mult.: 1
: 500

N-Channel Si 10 A 40 V 764 MHz to 941 MHz 15.7 dB 32 W - 40 C + 150 C SMD/SMT TO-270-2 Reel, Cut Tape, MouseReel
NXP Semiconductors RF MOSFET Transistors Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V Non-Stocked Lead-Time 53 Weeks
Min.: 1
Mult.: 1
: 50

N-Channel Si 100 V 960 MHz to 1.215 GHz 20.3 dB 275 W + 150 C Screw Mount NI-780 Reel, Cut Tape, MouseReel
NXP Semiconductors RF MOSFET Transistors Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V Non-Stocked Lead-Time 53 Weeks
Min.: 1
Mult.: 1
: 50

N-Channel Si 110 V 1.215 MHz to 960 MHz 19.7 dB 500 W + 150 C Screw Mount NI-780H-2 Reel, Cut Tape, MouseReel
NXP Semiconductors RF MOSFET Transistors Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V Non-Stocked Lead-Time 53 Weeks
Min.: 1
Mult.: 1
: 50

N-Channel Si 2 A 130 V 1.8 MHz to 600 MHz 25 dB 600 W + 150 C SMD/SMT NI-1230 Reel, Cut Tape, MouseReel
NXP Semiconductors RF MOSFET Transistors Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V Non-Stocked Lead-Time 53 Weeks
Min.: 1
Mult.: 1
: 150

N-Channel Si 130 V 1.8 MHz to 600 MHz 25 dB 600 W + 150 C SMD/SMT NI-1230 Reel, Cut Tape, MouseReel
NXP Semiconductors RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V Non-Stocked Lead-Time 53 Weeks
Min.: 1
Mult.: 1
: 150

N-Channel Si 30 A 133 V 1.8 MHz to 600 MHz 24 dB 1.25 kW + 150 C Screw Mount NI-1230H-4 Reel, Cut Tape, MouseReel
NXP Semiconductors MRF6VP121KHR5
NXP Semiconductors RF MOSFET Transistors Lateral N-Channel Broadband RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V Non-Stocked Lead-Time 53 Weeks
Min.: 1
Mult.: 1
: 50

N-Channel Si 110 V 20 dB 1 kW + 150 C Screw Mount NI-1230-4 Reel, Cut Tape