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NVHL015N065SC1

Name: onsemi NVHL015N065SC1
Brand: onsemi
SKU: 863-NVHL015N065SC1
Price: 27.3 GBP
Availability: InStock

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Mouser No:

863-NVHL015N065SC1

Mfr. No:

NVHL015N065SC1

Mfr.:

onsemi

Description:

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 12 mohm, 650V, M2, TO247-3L

Datasheet:

NVHL015N065SC1 Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVHL015N065SC1

In Stock: 400

Stock:: 400 Can Dispatch Immediately

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Factory Lead Time:: 9 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£27.30	£27.30
	£20.62	£206.20

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	163 A
Rds On - Drain-Source Resistance:	12 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	283 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	643 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	11 ns
Forward Transconductance - Min:	44 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	77 ns
Series:	NVHL015N065SC1
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	47 ns
Typical Turn-On Delay Time:	25 ns

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Datasheet

NVHL015N065SC1 Datasheet

PCN

Product Change Notification (PDF)

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).

NVHL015N065SC1 Silicon Carbide (SiC) MOSFET

onsemi NVHL015N065SC1 Silicon Carbide (SiC) MOSFET employs new technology that provides superior switching performance and high reliability. This SiC MOSFET features n-channel, high efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. The NVHL015N065SC1 MOSFET offers low ON resistance and compact chip size, which ensures low capacitance and gate charge. This EliteSiC MOSFET is 100% UIL tested and AEC−Q101 qualified. The NVHL015N065SC1 MOSFET features 650V drain−to−source voltage and 12mohm resistance. Typical applications include automotive traction inverters, DC/DC converters for EV/HEV, and onboard chargers.