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CDM22011-600LRFP SL PBFREE

Name: Central Semiconductor CDM22011-600LRFP SL PBFREE
Brand: Central Semiconductor
SKU: 610-CDM22011600LRFPS
Price: 2.3 GBP
Availability: InStock

Mouser No:

610-CDM22011600LRFPS

Mfr. No:

CDM22011-600LRFP SL PBFREE

Mfr.:

Central Semiconductor

Description:

MOSFETs N-Ch 11A PFC FET 600V 4.45nC 0.3Ohm

Lifecycle:

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Datasheet:

CDM22011-600LRFP SL PBFREE Datasheet

ECAD Model:

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More Information

Learn more about Central Semiconductor CDM22011-600LRFP SL PBFREE

In Stock: 353

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£2.30	£2.30
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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Central Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	11 A
Rds On - Drain-Source Resistance:	300 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	23.05 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	25 W
Channel Mode:	Enhancement
Tradename:	UltraMOS
Packaging:	Tube
Brand:	Central Semiconductor
Configuration:	Single
Product Type:	MOSFETs
Factory Pack Quantity:	50
Subcategory:	Transistors
Unit Weight:	2 g

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Datasheet

CDM22011-600LRFP SL PBFREE Datasheet

RoHS Certificate (PDF)

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

CxxDM Surface-Mount Enhancement-Mode MOSFETs

Central Semiconductor CxxDM Surface-Mount Enhancement-Mode MOSFETs are designed for high-speed pulsed amplifier and driver applications. These MOSFETs offer a very low R_DS(ON) and low threshold voltage.

CDMxx Silicon N-Channel Power MOSFETs

Central Semiconductor CDMxx Silicon N-Channel Power MOSFETs are designed for high voltage, fast switching applications like Power Factor Correction (PFC), lighting and power inverters. These MOSFETs combine high voltage capability with low r_DS(ON), low threshold voltage, and low gate charge for optimal efficiency.
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