SI6423ADQ-T1-GE3

Vishay / Siliconix
78-SI6423ADQ-T1-GE3
SI6423ADQ-T1-GE3

Mfr.:

Description:
MOSFETs TSSOP8 P-CH 20V 10.3A

ECAD Model:
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In Stock: 5,749

Stock:
5,749 Can Dispatch Immediately
Factory Lead Time:
3 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (GBP)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
£1.10 £1.10
£0.691 £6.91
£0.459 £45.90
£0.36 £180.00
£0.327 £327.00
Full Reel (Order in multiples of 3000)
£0.294 £882.00
† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
TSSOP-8
P-Channel
1 Channel
20 V
12.5 A
9.8 mOhms
- 8 V, 8 V
1 V
112 nC
- 55 C
+ 150 C
2.2 W
Enhancement
TrenchFET
Reel
Cut Tape
MouseReel
Brand: Vishay / Siliconix
Fall Time: 36 ns
Forward Transconductance - Min: 70 S
Product Type: MOSFETs
Rise Time: 4 ns
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: TrenchFET Power MOSFET
Typical Turn-Off Delay Time: 120 ns
Typical Turn-On Delay Time: 12 ns
Unit Weight: 158 mg
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CNHTS:
8541290000
TARIC:
8541290000
USHTS:
8541290065
ECCN:
EAR99

Si6423ADQ P-Channel 20V MOSFET

Vishay / Siliconix Si6423ADQ P-Channel 20V MOSFET is offered in a TSSOP-8 package with a -20V drain-source voltage and 20mJ single pulse avalanche energy rating. This MOSFET features a single configuration design. It is halogen-free, RoHS compliant, and 100% Rg and UIS tested. Vishay Si6423ADQ P-Channel 20V MOSFET is designed for load switches, battery switches, and power management applications.

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.