IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules

Infineon Technologies IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules are based on micro-pattern trench technology that reduces losses and offers high controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas in contrast to square trench cells. A specially optimized chip for industrial drive applications and solar energy systems provides low static losses, high power density, and soft switching. With a +175°C maximum operating temperature, the modules allow a significant increase in power density.

Results: 10
Select Image Part # Mfr. Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Product Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Minimum Operating Temperature Maximum Operating Temperature Technology Packaging
Infineon Technologies IGBT Modules 2300 V, 1800 A dual IGBT module
This product may require additional documentation to export from the United States.
2In Stock
£987.11
Min.: 1
Mult.: 1
Si Tray
Infineon Technologies IGBT Modules 1200 V, 450 A dual IGBT module 17In Stock
£105.48
£101.73
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 450 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules 1200 V, 900 A dual IGBT module 6In Stock
£206.65
£165.30
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 890 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules 1200 V, 600 A dual IGBT module 31In Stock
£131.10
£129.54
Min.: 1
Mult.: 1
Si Tray
Infineon Technologies IGBT Modules 1200 V, 900 A dual IGBT module 51In Stock
£163.61
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 900 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules 1200 V, 900 A dual IGBT module 11In Stock
50Expected 06/11/2026
£192.05
£155.13
Min.: 1
Mult.: 1
No
IGBT Silicon Modules Dual 1.2 kV 1.5 V 900 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules 1200 V, 300 A dual IGBT module 5In Stock
20On Order
£94.24
£89.01
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 300 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules PP IHM I
This product may require additional documentation to export from the United States.
Non-Stocked Lead-Time 39 Weeks
£1,000.94
Min.: 3
Mult.: 3
Si Tray
Infineon Technologies IGBT Modules 1200 V, 750 A dual IGBT module Non-Stocked Lead-Time 24 Weeks
£139.88
Min.: 10
Mult.: 10
IGBT Silicon Modules Dual 1.2 kV 1.5 V 750 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules 1700 V, 750 A dual IGBT module Non-Stocked Lead-Time 24 Weeks
£176.80
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.7 kV 1.7 V 750 A 100 nA - 40 C + 175 C Si Tray