Results: 10
Select Image Part # Mfr. Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Product Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Minimum Operating Temperature Maximum Operating Temperature Packaging
Infineon Technologies IGBT Modules 1200 V, 450 A dual IGBT module 17In Stock
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 450 A 100 nA - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 2300 V, 1800 A dual IGBT module
2In Stock
Min.: 1
Mult.: 1

Tray
Infineon Technologies IGBT Modules 1200 V, 600 A dual IGBT module 36In Stock
Min.: 1
Mult.: 1

Tray
Infineon Technologies IGBT Modules 1200 V, 900 A dual IGBT module 20In Stock
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 900 A 100 nA - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 1200 V, 900 A dual IGBT module 32In Stock
Min.: 1
Mult.: 1
No
IGBT Silicon Modules Dual 1.2 kV 1.5 V 900 A 100 nA - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 1200 V, 300 A dual IGBT module 13In Stock
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 1.2 kV 1.5 V 300 A 100 nA - 40 C + 175 C Tray
Infineon Technologies IGBT Modules PP IHM I
Lead-Time 14 Weeks
Min.: 1
Mult.: 1

Tray
Infineon Technologies IGBT Modules 1200 V, 750 A dual IGBT module Non-Stocked Lead-Time 22 Weeks
Min.: 10
Mult.: 10

IGBT Silicon Modules Dual 1.2 kV 1.5 V 750 A 100 nA - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 1700 V, 750 A dual IGBT module Lead-Time 22 Weeks
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 1.7 kV 1.7 V 750 A 100 nA - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 1200 V, 900 A dual IGBT module Non-Stocked Lead-Time 22 Weeks
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 1.2 kV 1.5 V 890 A 100 nA - 40 C + 175 C Tray