NXH020P120MNF1 SiC Module

onsemi NXH020P120MNF1 SiC Module contains a 20Mohm 1200V SiC MOSFET half-bridge and an NTC thermistor in an F1 module. The module has a recommended gate voltage of 18V to 20V. The NXH020P120MNF1 features an improved RDS(ON) at higher voltage and low thermal resistance.

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Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Series
Packaging

onsemi MOSFET Modules SiC Module, 2-PACK Half Bridge Topology, 1200 V, 20 mohm SiC M1 MOSFET
Datasheet
28In Stock
Min.: 1
Mult.: 1
SiC Press Fit Module N-Channel 1.2 kV 51 A 30 mOhms - 15 V, + 25 V 1.8 V - 40 C + 150 C 211 W NXH020P120MNF1 Tray

onsemi MOSFET Modules SiC Module, 2-PACK Half Bridge Topology, 1200 V, 20 mohm SiC M1 MOSFET with TIM
Datasheet
Non-Stocked Lead-Time 17 Weeks
Min.: 28
Mult.: 28

SiC Press Fit - 15 V, + 25 V - 40 C + 150 C NXH020P120MNF1 Tray