It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

BSS138WAHZGT106

Name: ROHM Semiconductor BSS138WAHZGT106
Brand: ROHM Semiconductor
SKU: 755-BSS138WAHZGT106
Price: 0.33 GBP
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

755-BSS138WAHZGT106

Mfr. No:

BSS138WAHZGT106

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Nch 60V 310mA, SOT-323, Small Signal MOSFET for Automotive AEC-Q101.

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

BSS138WAHZGT106 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about ROHM Semiconductor BSS138WAHZGT106

In Stock: 163

Stock:: 163

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 3,000

Expected 10/04/2026
Factory Lead Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

£-.--

Ext. Price:

£-.--

Est. Tariff:

Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£0.33	£0.33
	£0.249	£2.49
	£0.141	£14.10
	£0.094	£47.00
	£0.072	£72.00
Full Reel (Order in multiples of 3000)
	£0.064	£192.00
	£0.055	£330.00
	£0.051	£459.00
	£0.045	£1,080.00

Similar Product

Mfr.:

ROHM Semiconductor

Mfr. No:

R6002ENHTB1

Description:

MOSFETs SOP8 600V 1.7A N-CH MOSFET

Compare With Current Part

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-323-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	310 mA
Rds On - Drain-Source Resistance:	2.4 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.3 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	300 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	28 ns
Forward Transconductance - Min:	250 mS
Product Type:	MOSFETs
Rise Time:	5 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	18 ns
Typical Turn-On Delay Time:	3.5 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

BSS138WAHZGT106 Datasheet

Specification Sheets

Datasheet - Chinese (English language)

This functionality requires JavaScript to be enabled.

USHTS:: 8541210095
TARIC:: 8541210000
ECCN:: EAR99

BSS138WAHZG N-Ch 60V 310mA Small Signal MOSFET

ROHM Semiconductor BSS138WAHZG N-Ch 60V 310mA Small Signal MOSFET has various features to optimise performance and reliability. The ROHM Semiconductor BSS138WAHZG MOSFET has fast switching capability and ultra-low voltage drive at 2.5V. The device ensures efficient operation in various applications. Moreover, its ESD protection up to 2kV (HBM) enhances durability. Being Pb-free with RoHS compliance and halogen-free, it aligns with environmental standards. Additionally, its AEC-Q101 qualification makes it suitable for automotive applications.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.