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DMTH64M2LPDW-13

Name: Diodes Incorporated DMTH64M2LPDW-13
Brand: Diodes Incorporated
SKU: 621-DMTH64M2LPDW-13
Price: 1.85 GBP
Availability: OutOfStock

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Mouser No:

621-DMTH64M2LPDW-13

Mfr. No:

DMTH64M2LPDW-13

Mfr.:

Diodes Incorporated

Description:

MOSFETs MOSFET BVDSS: 41V-60V PowerDI5060-8/SWP T&R 2.5K

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

DMTH64M2LPDW-13 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Diodes Incorporated DMTH64M2LPDW-13

Availability

Stock:: 0

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On Order:: 2,500

Expected 27/03/2026
Factory Lead Time:: 24

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

£-.--

Ext. Price:

£-.--

Est. Tariff:

Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£1.85	£1.85
	£1.19	£11.90
	£0.811	£81.10
	£0.67	£335.00
	£0.59	£590.00
Full Reel (Order in multiples of 2500)
	£0.581	£1,452.50

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerDI5060-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	90 A
Rds On - Drain-Source Resistance:	7.8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	48 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	74 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Diodes Incorporated
Configuration:	Dual
Fall Time:	38 ns
Product Type:	MOSFETs
Rise Time:	22 ns
Series:	DMTH64M2LPDW
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	55 ns
Typical Turn-On Delay Time:	5.2 ns

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Datasheet

DMTH64M2LPDW-13 Datasheet (PDF)

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TARIC:: 8541290000

DMTH64M2LPDW Dual N-Channel E-Mode MOSFET

Diodes Incorporated DMTH64M2LPDW Dual N-Channel Enhancement-Mode MOSFET is designed for high-efficiency power switching applications. DMTH64M2LPDW integrates two MOSFETs in a single PowerDI^® 5mm x 6mm package, offering compact size and excellent thermal performance. Each channel features a low on-resistance [R_DS(on)] and high current capability, ideal for synchronous rectification in DC-DC converters, power management in computing systems, and battery protection circuits. With a maximum drain-source voltage of 60V and continuous drain current up to 90A, this Diodes Inc device ensures fast switching and low conduction losses. The rugged design, combined with low gate charge and high avalanche energy rating, provides reliable operation in demanding environments such as server motherboards, graphics cards, and portable electronics.