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SVD5867NLT4G-UM

Name: onsemi SVD5867NLT4G-UM
Brand: onsemi
SKU: 863-SVD5867NLT4G-UM
Price: 0.74 GBP
Availability: OutOfStock

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See Product Specifications

Mouser No:

863-SVD5867NLT4G-UM

Mfr. No:

SVD5867NLT4G-UM

Mfr.:

onsemi

Description:

MOSFETs NFET DPAK 60V 18A 43MOHM

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SVD5867NLT4G-UM Datasheet

ECAD Model:

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More Information

Learn more about onsemi SVD5867NLT4G-UM

Availability

Stock:: 0

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On Order:: 7,500

Expected 17/04/2026
Factory Lead Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

£-.--

Ext. Price:

£-.--

Est. Tariff:

Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£0.743	£0.74
	£0.467	£4.67
	£0.33	£33.00
	£0.281	£140.50
	£0.258	£258.00
Full Reel (Order in multiples of 2500)
	£0.23	£575.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	22 A
Rds On - Drain-Source Resistance:	39 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	15 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	43 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	VN
Fall Time:	2.4 ns
Forward Transconductance - Min:	8 S
Product Type:	MOSFETs
Rise Time:	12.6 ns
Series:	NVD5867NL
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	18.2 ns
Typical Turn-On Delay Time:	6.5 ns

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Datasheet

SVD5867NLT4G-UM Datasheet

USHTS:: 8541290095
TARIC:: 8541290000
ECCN:: EAR99

NVD5867NL Single N-Channel Power MOSFET

onsemi NVD5867NL Single N-Channel Power MOSFET features 60V drain-to-source voltage, 39mΩ maximum drain-to-source on resistance. This n-channel MOSFET offers low R_DS(on) to minimize conduction losses and high current capability. The NVD5867NL n-channel MOSFET is Avalanche energy specified, AEC-Q101 qualified, and PPAP capable. This n-channel MOSFET is Pb and halogen/BFR-free, and is RoHS-compliant. Typical applications include automotive solenoid/relay drivers, automotive lamp drivers, automotive motor drivers, automotive DC-DC converter output drivers, and automotive infotainment systems.