GP3D050B170B

Name: SemiQ GP3D050B170B
Brand: SemiQ
SKU: 148-GP3D050B170B
Price: 15.53 GBP
Availability: InStock

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Mouser No:

148-GP3D050B170B

Mfr. No:

GP3D050B170B

Mfr.:

SemiQ

Description:

SiC Schottky Diodes SiC Schottky Diode 50A 1700V TO-247-2

Datasheet:

GP3D050B170B Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-2
Configuration:	Single
If - Forward Current:	50 A
Vrrm - Repetitive Reverse Voltage:	1.7 kV
Vf - Forward Voltage:	2.27 V
Ifsm - Forward Surge Current:	360 A
Ir - Reverse Current:	42 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Vr - Reverse Voltage:	1.7 kV
Packaging:	Tube
Brand:	SemiQ
Pd - Power Dissipation:	789 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	30
Subcategory:	Diodes & Rectifiers

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Datasheet

GP3D050B170B Datasheet (PDF)

Compliance Codes

CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

GP3D050B170B QSiC™ 1700V SiC SCHOTTKY Diode

SemiQ GP3D050B170B QSiC™ 1700V Silicon Carbide (SiC) SCHOTTKY Diode comes in a TO-247-2L package designed to meet the size and power demands in applications such as switched-mode power supplies, uninterruptible power supplies (UPS), solar inverters and electric vehicle (EV) charging stations. This discrete diode features zero reverse recovery current and near-zero switching loss, as well as enhanced thermal management that reduces cooling needs. This results in highly efficient, high-performance designs that minimise system heat dissipation, enabling the use of smaller heatsinks to save space and costs. The GP3D050B170B module also supports easy parallel configurations for enhanced flexibility and scalability in power applications. SemiQ GP3D050B170B QSiC 1700V SiC SCHOTTKY Diode supports fast switching across an operating junction temperature range of -55°C to +175°C.

SiC Schottky Discrete Diodes

SemiQ SiC Schottky Discrete Diodes feature near-zero switching loss and reduced heat dissipation, increasing efficiency and requiring smaller heatsinks. The SiC Schottky Discrete Diodes are easy to parallel with fast, temperature-independent switching. The SemiQ SiC Schottky Discrete Diodes are designed for solar inverters, power supplies, motor drives, and charging station applications.