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SIA433EDJ-T1-GE3

Name: Vishay SIA433EDJ-T1-GE3
Brand: Vishay Semiconductors
SKU: 781-SIA433EDJ-GE3
Price: 0.83 GBP
Availability: InStock

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Mouser No:

781-SIA433EDJ-GE3

Mfr. No:

SIA433EDJ-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs -20V Vds 12V Vgs PowerPAK SC-70

Datasheet:

SIA433EDJ-T1-GE3 Datasheet

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Learn more about Vishay Semiconductors SIA433EDJ-T1-GE3

In Stock: 3,345

Stock:: 3,345 Can Dispatch Immediately

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Factory Lead Time:: 3 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+£3.50)

Pricing (GBP)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	£0.834	£0.83
	£0.513	£5.13
	£0.347	£34.70
	£0.279	£139.50
	£0.248	£248.00
Full Reel (Order in multiples of 3000)
	£0.227	£681.00
	£0.224	£1,344.00

† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SC-70-6
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	12 A
Rds On - Drain-Source Resistance:	15 mOhms
Vgs - Gate-Source Voltage:	- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	75 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	19 W
Channel Mode:	Enhancement
Tradename:	TrenchFET, PowerPAK
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	DE
Fall Time:	3.5 us
Forward Transconductance - Min:	35 S
Product Type:	MOSFETs
Rise Time:	0.6 us
Series:	SIA
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	10 us
Typical Turn-On Delay Time:	0.3 us
Part # Aliases:	SIA433EDJ-GE3
Unit Weight:	41 mg

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Datasheet

SIA433EDJ-T1-GE3 Datasheet

Models

PCN

Technical Resources

REACH Certificate (PDF)

CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

TrenchFET Gen III P-Channel Power MOSFETs

Vishay / Siliconix TrenchFET® Gen III P-Channel Power MOSFETs feature low on-resistance, low-voltage drops, increased efficiency, and battery time. These power MOSFETs are available in a variety of package sizes, including micro-foot, PowerPAK®, and TSOP-6. Vishay / Siliconix TrenchFET® Gen III P-Channel Power MOSFETs offer on-resistance ratings that accommodate a wide range of applications. Typical applications include load switches, adapter switches, battery switches, DC motors, and charger switches.

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Vishay / Siliconix TrenchFET^® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK^® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.

Industrial Power Solutions

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SiA433EDJ 20V P-Channel TrenchFET® Gen III MOSFET

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