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STP65N045M9

Name: STMicroelectronics STP65N045M9
Brand: STMicroelectronics
SKU: 511-STP65N045M9
Price: 6.07 GBP
Availability: InStock

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Mouser No:

511-STP65N045M9

Mfr. No:

STP65N045M9

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 650 V, 39 mOhm typ., 55 A MDmesh M9 Power MOSFET

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Datasheet:

STP65N045M9 Datasheet (PDF)

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In Stock: 1,233

Stock:: 1,233 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£6.07	£6.07
	£3.37	£33.70
	£3.10	£310.00
	£3.06	£1,530.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	55 A
Rds On - Drain-Source Resistance:	45 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4.2 V
Qg - Gate Charge:	80 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	245 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	STMicroelectronics
Product Type:	MOSFETs
Series:	MDmesh M9
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel

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Datasheet

STP65N045M9 Datasheet (PDF)

Other

Super-junction Power MOSFETs for best efficiency (PDF)

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Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: Italy
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.

STP65N045M9 MDmesh M9 Power MOSFET

STMicroelectronics STP65N045M9 MDmesh M9 Power MOSFET is designed for medium/high voltage MOSFETs featuring very low R_DS(on) per area. The device implements innovative super-junction MDmesh M9 technology offering a multi-drain manufacturing process that allows for an enhanced device structure.