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TGF2954

Name: Qorvo TGF2954
Brand: Qorvo
SKU: 772-TGF2954
Price: 74.24 GBP
Availability: OutOfStock

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Mouser No:

772-TGF2954

Mfr. No:

TGF2954

Mfr.:

Qorvo

Description:

GaN FETs DC-12GHz 27W 32V GaN P3dB @ 3GHz 44.5dBm

Datasheet:

TGF2954 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Qorvo TGF2954

Shipping Alert:

This product may require additional documentation to export from the United States.

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 24 Weeks Estimated factory production time.

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Minimum: 50 Multiples: 50

Unit Price:

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Ext. Price:

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Est. Tariff:

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£74.24	£3,712.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
Delivery Restrictions:	This product may require additional documentation to export from the United States.
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	Die
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	32 V
Id - Continuous Drain Current:	1.7 A
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	34.5 W
Brand:	Qorvo
Configuration:	Single
Gain:	19.6 dB
Maximum Operating Frequency:	15 GHz
Minimum Operating Frequency:	0 Hz
Output Power:	27 W
Packaging:	Gel Pack
Product Type:	GaN FETs
Series:	TGF2954
Factory Pack Quantity:	50
Subcategory:	Transistors
Technology:	GaN-on-SiC
Transistor Type:	GaN HEMT
Part # Aliases:	1112246

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5-0810-13

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Datasheet

TGF2954 Datasheet (PDF)

PCN

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CNHTS:: 8542319000
CAHTS:: 8542330000
USHTS:: 8542390090
JPHTS:: 8542330996
KRHTS:: 8532331000
MXHTS:: 8542330201
ECCN:: 3A001.b.3.b.2

TGF2954 GaN on SiC HEMT

Qorvo TGF2954 Gallium-Nitride (GaN) on Silicon Carbide (SiC) High-Electron Mobility Transistor (HEMT) operates from DC to 12GHz and typically provides 44.5dBm of saturated output power (P_SAT) with a power gain of 19.6dB. This field-effect transistor (FET) can switch faster than silicon power transistors. This function, combined with its small footprint, provides more energy efficiency while creating more space for external components. Qorvo TGF2954 GaN on SiC Transistor is offered as a bare die, with chip dimensions of 1.01mm x 1.68mm x 0.10mm. It has a maximum power-added efficiency range of 71.5%, making it appropriate for high-efficiency applications. Typical applications include satellite, point-to-point, and military communications as well as marine radar, defense and aerospace, amplifiers, and broadband wireless.

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.