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QPD0020TR7

Name: Qorvo QPD0020TR7
Brand: Qorvo
SKU: 772-QPD0020TR7
Price: 70.57 GBP
Availability: OutOfStock

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Mouser No:

772-QPD0020TR7

Mfr. No:

QPD0020TR7

Mfr.:

Qorvo

Description:

GaN FETs DC-6GHz 35W 50V GaN Transistor

Datasheet:

QPD0020TR7 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Qorvo QPD0020TR7

Availability

Stock:: 0

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On Order:: 500

Expected 11/09/2026
Factory Lead Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

This Product Ships FREE

Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£70.57	£70.57
	£69.87	£698.70
	£54.88	£1,372.00
	£43.29	£4,329.00
	£38.67	£9,667.50
Full Reel (Order in multiples of 500)
	£38.56	£19,280.00
1,000	Quote

Alternative Packaging

Mfr. Part No.:

QPD0020

Packaging:

Reel, Cut Tape

Availability:

In Stock

Price:

£64.80

Min:

Similar Product

Mfr.:

Qorvo

Mfr. No:

QPD0020

Description:

RF Bipolar Transistors DC-6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor

Lifecycle:

Restricted Availability: This part number is not currently available from Mouser. Product may be in limited distribution or a factory special order.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	QFN-20
Brand:	Qorvo
Configuration:	Single
Development Kit:	QPD0020EVB02
Gain:	16.7 dB
Maximum Operating Frequency:	2.69 GHz
Minimum Operating Frequency:	2.62 GHz
Output Power:	34.7 W
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	GaN FETs
Series:	QPD0020
Factory Pack Quantity:	500
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	HEMT
Part # Aliases:	QPD0020

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Datasheet

QPD0020TR7 Datasheet (PDF)

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Compliance Codes

USHTS:: 8542390090
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

QPD0020 GaN RF Power Transistors

Qorvo QPD0020 GaN RF Power Transistors are 35W unmatched discrete GaN on SiC HEMT which operates from DC to 6GHz on a +48V supply rail. The devices are suited for base station, radar, and communications applications. The transistors support CW and pulsed mode of operations. The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier.