TK210V65Z,LQ

Toshiba
757-TK210V65ZLQ
TK210V65Z,LQ

Mfr.:

Description:
MOSFETs MOSFET 650V 210mOhms DTMOS-VI

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
20 Weeks Estimated factory production time.
Minimum: 2500   Multiples: 2500
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:
This Product Ships FREE

Pricing (GBP)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 2500)
£1.41 £3,525.00

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
DFN-8
N-Channel
1 Channel
650 V
15 A
210 mOhms
- 30 V, 30 V
4 V
25 nC
- 55 C
+ 150 C
130 W
Enhancement
Reel
Brand: Toshiba
Configuration: Single
Fall Time: 4 ns
Product Type: MOSFETs
Rise Time: 14 ns
Series: DTMOS VI
Factory Pack Quantity: 2500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 66 ns
Typical Turn-On Delay Time: 34 ns
Unit Weight: 161.193 mg
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CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

650V DTMOS-VI Superjunction MOSFETs

Toshiba 650V DTMOS-VI Superjunction MOSFETs are designed to operate in switching power supplies. These N-channel MOSFETs feature high-speed switching properties with lower capacitance. The Toshiba 650V DTMOS-VI Superjunction MOSFETs silicon MOSFETs offer a typical 0.092Ω to 0.175Ω low drain-source on-resistance. These devices feature a drain-source voltage of 10V.