TJ20S04M3L,LXHQ
See Product Specifications
Mfr.:
Description:
MOSFETs 41W 1MHz Automotive; AEC-Q101
In Stock: 8,705
-
Stock:
-
8,705 Can Dispatch ImmediatelyAn unexpected error occurred. Please try again later.
Pricing (GBP)
| Qty. | Unit Price |
Ext. Price
|
|---|---|---|
| £1.11 | £1.11 | |
| £0.703 | £7.03 | |
| £0.467 | £46.70 | |
| £0.366 | £183.00 | |
| £0.333 | £333.00 | |
| Full Reel (Order in multiples of 2000) | ||
| £0.301 | £602.00 | |
| £0.272 | £1,088.00 | |
| £0.264 | £6,336.00 | |
Datasheet
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- TARIC:
- 8541290000
- ECCN:
- EAR99
United Kingdom

Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2