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TGF2929-FL

Name: Qorvo TGF2929-FL
Brand: Qorvo
SKU: 772-TGF2929-FL
Price: 652.31 GBP
Availability: InStock

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Mouser No:

772-TGF2929-FL

Mfr. No:

TGF2929-FL

Mfr.:

Qorvo

Description:

GaN FETs DC-3.5GHz 100W 28V GaN

Datasheet:

TGF2929-FL Datasheet (PDF)

ECAD Model:

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Learn more about Qorvo TGF2929-FL

In Stock: 33

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£652.31	£652.31

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Mounting Style:	Screw Mount
Package/Case:	NI-360
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	28 V
Id - Continuous Drain Current:	12 A
Vgs - Gate-Source Voltage:	- 7 V, + 2 V
Vgs th - Gate-Source Threshold Voltage:	- 2.9 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	144 W
Brand:	Qorvo
Maximum Operating Frequency:	3.5 GHz
Minimum Operating Frequency:	0 Hz
Moisture Sensitive:	Yes
Output Power:	100 W
Packaging:	Tray
Product Type:	GaN FETs
Series:	TGF2929
Factory Pack Quantity:	25
Subcategory:	Transistors
Technology:	GaN-on-SiC
Type:	RF Power MOSFET
Part # Aliases:	TGF2929 1123811
Unit Weight:	64.190 g

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Datasheet

TGF2929-FL Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8542390000
USHTS:: 8542390090
JPHTS:: 854239099
TARIC:: 8542399000
MXHTS:: 8542399901
ECCN:: EAR99

TGF2929 GaN RF Power Transistors

Qorvo TGF2929 GaN RF Power Transistors are discrete GaN (Gallium Nitride) on SiC (Silicon Carbide) HEMTs (High-Electron Mobility Transistor) that operate from DC to 3.5GHz. They are constructed with the QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.