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STP80N240K6

Name: STMicroelectronics STP80N240K6
Brand: STMicroelectronics
SKU: 511-STP80N240K6
Price: 4.63 GBP
Availability: InStock

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Mouser No:

511-STP80N240K6

Mfr. No:

STP80N240K6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package

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Datasheet:

STP80N240K6 Datasheet (PDF)

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In Stock: 75

Stock:: 75

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On Order:: 1,000

Expected 21/09/2026
Factory Lead Time:: 13

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£4.63	£4.63
	£2.50	£25.00
	£2.29	£229.00
	£1.91	£955.00
	£1.86	£1,860.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	220 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	25.9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	140 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Fall Time:	12 s
Product Type:	MOSFETs
Rise Time:	5.3 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	47.8 ns
Typical Turn-On Delay Time:	16 ns
Unit Weight:	2 g

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Datasheet

STP80N240K6 Datasheet (PDF)

PCN

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

STP80N240K6 MDmesh K6 Power MOSFET

STMicroelectronics STP80N240K6 MDmesh K6 Power MOSFET is based on the ultimate MDmesh K6 technology built on 20 years of STM experience on super junction technology. The high voltage N-channel power MOSFET offers an ultra-low gate charge and excellent R_DS(on) x area. The ST STP80N240K6 800V Power MOSFET features best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.