It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

SIDR608EP-T1-RE3

Name: Vishay SIDR608EP-T1-RE3
Brand: Vishay Semiconductors
SKU: 78-SIDR608EP-T1-RE3
Price: 2.4 GBP
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

78-SIDR608EP-T1-RE3

Mfr. No:

SIDR608EP-T1-RE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs N-CHANNEL 45-V (D-S) 175C MOSFET

Datasheet:

SIDR608EP-T1-RE3 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Vishay Semiconductors SIDR608EP-T1-RE3

In Stock: 11,400

Stock:: 11,400 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Quantities greater than 11400 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

£-.--

Ext. Price:

£-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+£3.50)

Pricing (GBP)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	£2.40	£2.40
	£1.64	£16.40
	£1.14	£114.00
	£0.986	£493.00
	£0.943	£943.00
Full Reel (Order in multiples of 3000)
	£0.831	£2,493.00

† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK SO-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	228 A
Rds On - Drain-Source Resistance:	1.36 mOhms
Vgs - Gate-Source Voltage:	- 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.3 V
Qg - Gate Charge:	167 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	125 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	25 ns
Forward Transconductance - Min:	120 S
Product Type:	MOSFETs
Rise Time:	86 ns
Series:	SIDR
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	52 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SIDR608EP-T1-RE3 Datasheet

PCN

This functionality requires JavaScript to be enabled.

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

N-Channel 30-45V (D-S) MOSFETs

Vishay N-Channel 30-45V (D-S) MOSFETs are TrenchFET® Gen IV power MOSFETs with a very low RDS Qg figure-of-merit (FOM). The devices are tuned for the lowest RDS - Qoss FOM with a top-side cooling feature that provides an additional venue for thermal transfers. The MOSFETs are 100% Rg and UIS tested.