SGT105R70ILB

STMicroelectronics
511-SGT105R70ILB
SGT105R70ILB

Mfr.:

Description:
GaN FETs 700 V, 80 mOhm typ., 21.7 A, e-mode PowerGaN transistor
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Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
52 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 3000   Multiples: 3000
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:
This Product Ships FREE

Pricing (GBP)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 3000)
£1.72 £5,160.00
9,000 Quote

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: GaN FETs
SMD/SMT
PowerFLAT-8
700 V
21.7 A
105 mOhms
- 6 V, + 7 V
2.5 V
4.8 nC
- 55 C
+ 150 C
158 W
Enhancement
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: Not Available
Packaging: Reel
Product: FET
Product Type: GaN FETs
Rise Time: 9 ns
Series: SGT
Factory Pack Quantity: 3000
Subcategory: Transistors
Technology: GaN
Type: PowerGaN Transistor
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Attributes selected: 0

Datasheet

PCN

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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

SGT G-HEMT™ E-Mode PowerGaN Transistors

STMicroelectronics SGT G-HEMT™ E-Mode PowerGaN Transistors are high‑performance, enhancement‑mode (normally‑off) GaN devices designed to deliver exceptionally fast switching, low conduction losses, and high power density across demanding power‑conversion applications. These transistors leverage Gallium Nitride’s wide‑bandgap advantages to achieve extremely low capacitances, minimal gate charge, and zero reverse‑recovery charge, enabling superior efficiency compared to traditional silicon power switches.

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