PSMN7R2-100YSFX

Nexperia
771-PSMN7R2-100YSFX
PSMN7R2-100YSFX

Mfr.:

Description:
MOSFETs SOT669 100V 111A N-CH MOSFET

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 215

Stock:
215 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1500)

Pricing (GBP)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
£1.76 £1.76
£1.13 £11.30
£0.773 £77.30
£0.616 £308.00
Full Reel (Order in multiples of 1500)
£0.541 £811.50
£0.504 £1,512.00
† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Nexperia
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
SO8-4
N-Channel
1 Channel
100 V
111 A
6.9 mOhms
- 20 V, 20 V
4 V
50 nC
- 55 C
+ 175 C
194 W
Enhancement
Reel
Cut Tape
MouseReel
Brand: Nexperia
Configuration: Single
Fall Time: 18 ns
Product Type: MOSFETs
Rise Time: 15 ns
Factory Pack Quantity: 1500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 34 ns
Typical Turn-On Delay Time: 14 ns
Part # Aliases: 934662278115
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

NextPower 80/100V MOSFETs

Nexperia NextPower 80/100V MOSFETs are recommended for high-efficiency switching and high-reliability applications. The NextPower MOSFETs feature 50% lower RDS(on) and a strong avalanche energy rating. The devices are ideally suited for power supply, telecom, industrial designs, USB-PD Type-C chargers and adapters, and 48V DC-DC adapters. The devices have low body diode losses with Qrr down to 50 nano-coulombs (nC). This results in lower reverse recovery current (IRR), lower voltage spikes (Vpeak), and reduced ringing for further optimized dead time.