NVTFS003N04CTAG

onsemi
863-NVTFS003N04CTAG
NVTFS003N04CTAG

Mfr.:

Description:
MOSFETs Single N-Chn Pwr Mosfet 40V

ECAD Model:
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In Stock: 5,600

Stock:
5,600 Can Dispatch Immediately
Factory Lead Time:
30 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1500)

Pricing (GBP)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
£1.81 £1.81
£1.16 £11.60
£0.796 £79.60
£0.636 £318.00
£0.582 £582.00
Full Reel (Order in multiples of 1500)
£0.582 £873.00
† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
WDFN-8
N-Channel
1 Channel
40 V
103 A
3.5 mOhms
- 20 V, 20 V
2.5 V
23 nC
- 55 C
+ 175 C
69 W
Enhancement
AEC-Q101
Reel
Cut Tape
MouseReel
Brand: onsemi
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: MY
Fall Time: 3 ns
Forward Transconductance - Min: 93 S
Product Type: MOSFETs
Rise Time: 47 ns
Series: NVTFS003N04C
Factory Pack Quantity: 1500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 19 ns
Typical Turn-On Delay Time: 10 ns
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Attributes selected: 0

CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

Single N-Channel Power MOSFETs

onsemi Single N-Channel Power MOSFETs are small-footprint and compact MOSFETs with low RDS(on) and low capacitance. The low RDS(on) value helps to minimize conduction losses, and low capacitance minimizes driver losses. These single N-channel power MOSFETs are Pb-free and RoHS compliant and feature a -55°C to +175°C operating temperature range.

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.