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NVMYS6D2N06CLTWG

Name: onsemi NVMYS6D2N06CLTWG
Brand: onsemi
SKU: 863-NVMYS6D2N06CLTWG
Price: 1.4 GBP
Availability: InStock

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Mouser No:

863-NVMYS6D2N06CLTWG

Mfr. No:

NVMYS6D2N06CLTWG

Mfr.:

onsemi

Description:

MOSFETs T6 60V LL LFPAK

Datasheet:

NVMYS6D2N06CLTWG Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVMYS6D2N06CLTWG

In Stock: 8

Stock:: 8

Can Dispatch Immediately

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On Order:: 3,000

Expected 16/03/2026
Factory Lead Time:: 29

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

£-.--

Ext. Price:

£-.--

Est. Tariff:

Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£1.40	£1.40
	£0.882	£8.82
	£0.592	£59.20
	£0.485	£242.50
	£0.424	£424.00
Full Reel (Order in multiples of 3000)
	£0.39	£1,170.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	71 A
Rds On - Drain-Source Resistance:	6.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	20 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	61 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Product Type:	MOSFETs
Series:	NVMYS6D2N06CL
Factory Pack Quantity:	3000
Subcategory:	Transistors

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Datasheet

NVMYS6D2N06CLTWG Datasheet

PCN

Product Change Notification 2024-06-12 (PDF)

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

LFPAK4 Automotive N-Channel Power MOSFETs

onsemi LFPAK4 Automotive N-Channel Power MOSFETs are AEC-Q101-qualified, single N-channel MOSFETs with a small 5mm x 6mm footprint, ideal for compact designs. These devices feature a low drain-to-source on-resistance to minimize conduction losses and low gate charge and capacitance to minimize driver losses. These automotive-grade power MOSFETs are Pb-free, RoHS-compliant, and feature a wide -55°C to +175°C operating temperature range.

Trench6 N-Channel MV MOSFETs

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