NVD5C684NLT4G

onsemi
863-NVD5C684NLT4G
NVD5C684NLT4G

Mfr.:

Description:
MOSFETs T6 60V LL DPAK

ECAD Model:
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In Stock: 4,946

Stock:
4,946 Can Dispatch Immediately
Factory Lead Time:
44 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (GBP)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
£1.70 £1.70
£1.15 £11.50
£0.811 £81.10
£0.646 £323.00
£0.603 £603.00
Full Reel (Order in multiples of 2500)
£0.54 £1,350.00
† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
DPAK-3 (TO-252-3)
N-Channel
1 Channel
60 V
38 A
13.7 mOhms
- 20 V, 20 V
1.2 V
9.6 nC
- 55 C
+ 175 C
27 W
Enhancement
AEC-Q101
Reel
Cut Tape
MouseReel
Brand: onsemi
Configuration: Single
Fall Time: 40 ns
Forward Transconductance - Min: 30 S
Product Type: MOSFETs
Rise Time: 43 ns
Series: NVD5C684NL
Factory Pack Quantity: 2500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 25 ns
Typical Turn-On Delay Time: 8 ns
Unit Weight: 330 mg
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

NVD5C Power MOSFETs

onsemi NVD5C Power MOSFETs are AEC-Q101 Qualified and offer robust solutions for automotive applications. NVD5C Power MOSFETs offer Low RDS(on) to minimize conduction losses and low QG and Capacitance to minimize driver losses. These onsemi single N-Channel MOSFETs are housed in a compact, surface-mount DPAK package and are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.